MOBILE  DDR  SDRAM
128Mb
 


 

PRODUCT  FEATURES

• JEDEC standard 1.8V and 2.5V power supply.
• Four internal banks for concurrent operation
• MRS cycle with address key programs
     - CAS  latency 2, 3 (clock)
     - Burst length (2, 4, 8, 16)
     - Burst type (sequential & interleave)
• Fully differential clock inputs (CK, /CK)
• All inputs except data & DM are sampled at the rising edge of the system clock
• Data I/O transaction on both edges of data strobe
• Bidirectional data strobe per byte of data (DQS)
• DM for write masking only
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• 64ms refresh period (4K cycle)
• Auto & self refresh 
• Concurrent Auto Precharge
• Maximum clock frequency up to 166MHZ
• Maximum data rate up to 333Mbps/pin
• Special Power Saving supports.
     - PASR (Partial Array Self Refresh)
     - Auto TCSR (Temperature Compensated Self Refresh)
     - Deep Power Down Mode
     - Programmable Driver Strength Control by Full Strength or 1/2, 1/4, 1/8 of Full Strength
• LVCMOS compatible inputs/outputs



 
PRODUCT  FAMILY
Density
Part Number
Configuration
Voltage Range
Speed
Features
Package
128Mb N128R3218LPAF2 4Mb x 32 1.65V - 1.95V 100/133/166MHz PASR, Auto TCSR, DPD 90-FBGA/Green
128Mb N128R1618LPAC2 8Mb x 16 1.65V - 1.95V 100/133/166MHz PASR, Auto TCSR, DPD 60-FBGA/Green
128Mb N128R3225LPAF2 4Mb x 32 2.3V - 2.7V 133/166/200MHz PASR, Auto TCSR, DPD 90-FBGA/Green
128Mb N128R1625LPAC2 8Mb x 16 2.3V - 2.7V 133/166/200MHz PASR, Auto TCSR, DPD 60-FBGA/Green
128Mb N128R3218LPAW 4Mb x 32 1.65V - 1.95V 100MHz PASR, Auto TCSR, DPD Green Wafer
128Mb N128R1618LPAW 8Mb x 16 1.65V - 1.95V 100MHz PASR, Auto TCSR, DPD Green Wafer
128Mb N128R3225LPAW 4Mb x 32 2.3V - 2.7V 133MHz PASR, Auto TCSR, DPD Green Wafer
128Mb N128R1625LPAW 8Mb x 16 2.3V - 2.7V 133MHz PASR, Auto TCSR, DPD Green Wafer