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MOBILE DDR SDRAM |
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PRODUCT FEATURES |
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• JEDEC standard 1.8V and 2.5V power supply.
• Four internal banks for concurrent operation
• MRS cycle with address key programs
- CAS latency 2, 3 (clock)
- Burst length (2, 4, 8, 16)
- Burst type (sequential & interleave)
• Fully differential clock inputs (CK, /CK)
• All inputs except data & DM are sampled at the rising edge of the system clock
• Data I/O transaction on both edges of data strobe
• Bidirectional data strobe per byte of data (DQS)
• DM for write masking only
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• 64ms refresh period (4K cycle)
• Auto & self refresh
• Concurrent Auto Precharge
• Maximum clock frequency up to 166MHZ
• Maximum data rate up to 333Mbps/pin
• Special Power Saving supports.
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self Refresh)
- Deep Power Down Mode
- Programmable Driver Strength Control by Full Strength or 1/2, 1/4, 1/8 of Full Strength
• LVCMOS compatible inputs/outputs
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PRODUCT FAMILY |
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Density |
Part Number |
Configuration |
Voltage Range |
Speed |
Features |
Package |
| 128Mb |
N128R3218LPAF2 |
4Mb x 32 |
1.65V - 1.95V |
100/133/166MHz |
PASR, Auto TCSR, DPD |
90-FBGA/Green |
| 128Mb |
N128R1618LPAC2 |
8Mb x 16 |
1.65V - 1.95V |
100/133/166MHz |
PASR, Auto TCSR, DPD |
60-FBGA/Green |
| 128Mb |
N128R3225LPAF2 |
4Mb x 32 |
2.3V - 2.7V |
133/166/200MHz |
PASR, Auto TCSR, DPD |
90-FBGA/Green |
| 128Mb |
N128R1625LPAC2 |
8Mb x 16 |
2.3V - 2.7V |
133/166/200MHz |
PASR, Auto TCSR, DPD |
60-FBGA/Green |
| 128Mb |
N128R3218LPAW |
4Mb x 32 |
1.65V - 1.95V |
100MHz |
PASR, Auto TCSR, DPD |
Green Wafer |
| 128Mb |
N128R1618LPAW |
8Mb x 16 |
1.65V - 1.95V |
100MHz |
PASR, Auto TCSR, DPD |
Green Wafer |
| 128Mb |
N128R3225LPAW |
4Mb x 32 |
2.3V - 2.7V |
133MHz |
PASR, Auto TCSR, DPD |
Green Wafer |
| 128Mb |
N128R1625LPAW |
8Mb x 16 |
2.3V - 2.7V |
133MHz |
PASR, Auto TCSR, DPD |
Green Wafer |
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